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BD707/709/711 BD708/710/712 COMPLEMENTARY SILICON POWER TRANSISTORS s SGS-THOMSON PREFERRED SALESTYPES s COMPLEMENTARY PNP - NPN DEVICES APPLICATION s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BD707, BD709, and BD711 are silicon 3 epitaxial-base NPN power transistors in Jedec 2 1 TO-220 plastic package, intented for use in power linear and switching applications. The complementary PNP types are BD708, TO-220 BD710, and BD712 respectively. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t NPN BD707 BD709 BD711 PNP BD708 BD710 BD712 V CBO Collector-Base Voltage (IE = 0) 60 80 100 V V CER Collector-Emitter Voltage (V BE = 0) 60 80 100 V V CEO Collector-Emitter Voltage (I B = 0) 60 80 100 V V EBO Emitter-Base Voltage (I C = 0) 5 V IC Collector Current 12 A IB Base Current 5 A o P t ot Total Dissipation at T c 25 C 75 W o T stg Storage Temperature -65 to 150 C o Tj Max. O perating Junction Temperature 150 C For PNP types voltage and current values are negative September 1997 1/6 BD707/708/709/710/711/712 THERMAL DATA o R t hj-ca se Thermal Resistance Junction-case Max 1.67 C/W o R t hj-ca se Thermal Resistance Junction-ambient Max 70 C/W ELECTRICAL CHARACTERISTICS